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 SM ISO690:2012POTLOG, Tamara, SPALATU, Nicolae, MATICIUC, Natalia, CIOBANU, Vasile, HIIE, Jaan, MERE, Arvo, MIKLI, Valdek, VALDNA, Vello. SSDP 8 P Fill factor losses in thin film CdS/CdTe photovoltaic devices. In: Materials Science and Condensed Matter Physics, 13-17 septembrie 2010, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2010, Editia 5, p. 233. |
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| Materials Science and Condensed Matter Physics Editia 5, 2010 |
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Conferința "Materials Science and Condensed Matter Physics" Chișinău, Moldova, 13-17 septembrie 2010 | ||||||
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The fill factor (FF) is a key parameter in the analysis of the efficiency of the photovoltaic devices. For an ideal device, the fill factor is a function only of the ratio light-generated current/reverse saturation current formula and is not a function of the ideality factor (A). FF is a parameter which, in conjunction with open circuit voltage (Voc) and current density (Jsc), determines the maximum power from a photovoltaic device. Current density losses are attributed to reflection, glass absoption, TCO absorption, CdS absorption, and deep-penetration losses. In general open circuit voltage is limited by the dominant current transport mechanisms. This paper will analyze the photovoltaic parameters of the CdS/CdTe photovoltaic devices prepared by close space sublimation (CSS) with different thickness of absorber. Thin film CdS/CdTe photovoltaic devices were fabricated on glass plates with an area of 2 x 2 cm2 covered with a SnO2 layer with a conductivity of ~ 102W-1cm-1. SnO2 served as the transparent front contact to CdS. Both CdS and CdTe layers were grown sequentially without intermediate processing. CdS was 0, 42 mm thick and had the resistivity 2-3 W×cm and transparency above 85%. After the CdTe layer was deposited, the structures were held in either CdCl2:H2O saturated solutions and then annealed in the air at 4000C ±50C for 30 min. All devices were completed with a Ni contact, which was deposited by the thermal evaporation process in vacuum. Different photovoltaic devices were fabricated with different thickness of CdTe at a fixed substrate and source temperatures of 350oC±50C and 540oC±50C, respectively. Photovoltaic solar energy conversion of CdS/CdTe devices is investigated using current-voltage (J-V) and capacitance-voltage (C-V) characteristics over a temperature range of 300-400 K. Current-voltage characteristics show that the FF of the prepared CdS/CdTe devices is low in general and depends on the thickness of the absorber. With the decreasing of the thickness of CdTe layer, the J-V curves are quite linear, at higher voltages and the reverse saturation current decreases. Recombination in the depletion region reduces the fill factor through the increase in A-factor and the decrease in open circuit voltage. Series resistance (Rs) and shunt resistance (Rsh) also reduce the FF. |
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<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Potlog, T.P.</dc:creator> <dc:creator>Spalatu, N.N.</dc:creator> <dc:creator>Maticiuc, N.</dc:creator> <dc:creator>Ciobanu, V.G.</dc:creator> <dc:creator>Hiie, J.</dc:creator> <dc:creator>Mere, A.</dc:creator> <dc:creator>Mikli, V.</dc:creator> <dc:creator>Valdna, V.</dc:creator> <dc:date>2010</dc:date> <dc:description xml:lang='en'><p>The fill factor (FF) is a key parameter in the analysis of the efficiency of the photovoltaic devices. For an ideal device, the fill factor is a function only of the ratio light-generated current/reverse saturation current formula and is not a function of the ideality factor (A). FF is a parameter which, in conjunction with open circuit voltage (Voc) and current density (Jsc), determines the maximum power from a photovoltaic device. Current density losses are attributed to reflection, glass absoption, TCO absorption, CdS absorption, and deep-penetration losses. In general open circuit voltage is limited by the dominant current transport mechanisms. This paper will analyze the photovoltaic parameters of the CdS/CdTe photovoltaic devices prepared by close space sublimation (CSS) with different thickness of absorber. Thin film CdS/CdTe photovoltaic devices were fabricated on glass plates with an area of 2 x 2 cm2 covered with a SnO2 layer with a conductivity of ~ 102W-1cm-1. SnO2 served as the transparent front contact to CdS. Both CdS and CdTe layers were grown sequentially without intermediate processing. CdS was 0, 42 mm thick and had the resistivity 2-3 W×cm and transparency above 85%. After the CdTe layer was deposited, the structures were held in either CdCl2:H2O saturated solutions and then annealed in the air at 4000C ±50C for 30 min. All devices were completed with a Ni contact, which was deposited by the thermal evaporation process in vacuum. Different photovoltaic devices were fabricated with different thickness of CdTe at a fixed substrate and source temperatures of 350oC±50C and 540oC±50C, respectively. Photovoltaic solar energy conversion of CdS/CdTe devices is investigated using current-voltage (J-V) and capacitance-voltage (C-V) characteristics over a temperature range of 300-400 K. Current-voltage characteristics show that the FF of the prepared CdS/CdTe devices is low in general and depends on the thickness of the absorber. With the decreasing of the thickness of CdTe layer, the J-V curves are quite linear, at higher voltages and the reverse saturation current decreases. Recombination in the depletion region reduces the fill factor through the increase in A-factor and the decrease in open circuit voltage. Series resistance (Rs) and shunt resistance (Rsh) also reduce the FF.</p></dc:description> <dc:source>Materials Science and Condensed Matter Physics (Editia 5) 233-233</dc:source> <dc:title>SSDP 8 P Fill factor losses in thin film CdS/CdTe photovoltaic devices</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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