Chalcogenide glass semiconductors (ChGS) are pointed out to be promising materials for diffractive and holographic optical elements in optical processing systems, photoresists in photolithography including the submicron range structures. ChGS exhibit a number of interesting optical properties such as high resolution (104 mm-1) and diffraction efficiency (50%), but low photosensitivity significantly restricts the field of ChGS application. The aim of this work is to study the possibilities of increasing the photosensitivity of ChGS thin films by electrical field application during recording process. Two methods of hologram recording in thin film (~1μm) structures (As2S3, As2Se3 and their mixed compounds) are researched in the work. The first method consists on optical recording of holographic gratings by two beams interferometry scheme, and second one is the same optical scheme with additional electrical field application. We exploit the electrical field (105-106 Vcm-1) in form of sandwich structure (Metal- ChGS-Metal) and corona discharge (5-8 kV).It was shown that application of corona discharge simultaneously with laser recording of diffraction gratings in structures ChGS-Metal gives the raise of holographic sensitivity and diffraction efficiency. The subsequent selective wet etching of phase holographic gratings results in increasing the relief depth and diffraction efficiency of etched relief-phase gratings. We investigated holographic gratings recording in sandwich structures Metal-ChGS-Metal of various ChGS thickness under electrical field. Diffraction gratings were formed in dynamic regime of record-readout by two laser beams Fourier scheme (monomode laser beam l=0.63 μm, P=50mW) with resolution 1000 mm1. It was demonstrated that the decreasing ChGS thickness from 2500 nm to 50 nm causes the reducing growth rate and value of diffraction efficiency of gratings, but under electrical field these parameters are improved considerably. Two known phenomena observing in ChVS films was used for diffraction gratings recording in As2S3 and As2Se3 films: photostructural transformations (PhT) in ChGS films under the influence of light, and electro-stimulated chemical interaction (ESCI) in structures Al-ChVS under the influence of light and electric field. It was shown, that the strong diminution of rate and magnitude of PhT occur at small thickness of ChGS films of about d<0,5 μm. Efficiency of recording is considerably raised by using of a writing electrocontrolled process of recording in structures Al-ChVS.