Raman scattering analysis of InGaAs/InP: Effect of rare earth (Dysprosium) addition during liquid phase epitaxial growth

Tiginyanu Ion, Ursaki Veaceslav, Podor Balint, Csontos L., Shontya Viktor

Academy of Sciences of Moldova

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Ediţia 8. 1996. New Jersey. ISSN 10928669.

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Raman and electrical characterization of n-InP implanted by 630-keV nitrogen

Tiginyanu Ion, Miao Jianmin, Hartnagel Hans Ludwig, Rueck Dorothee M., Tinschert Klaus, Ursaki Veaceslav, Ichizli V.

Darmstadt University of Technology

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Ediţia 8. 1996. New Jersey. ISSN 10928669.

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Zn+, Zn+/P+ and Zn+/As+ implanted InP: Study of electrical and symmetry properties

Tiginyanu Ion, Kravetsky Igor, Ursaki Veaceslav, Marowsky Gerd, Hartnagel Hans Ludwig

Darmstadt University of Technology

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

1997. New Jersey. ISSN 10928669.

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