CdS films deposited by hot wall technique on mica were used as substrates for Cu(InGa)Se₂ deposition. Two methods were used for the deposition of Cu(InGa)Se₂ films: a) vacuum thermal evaporation from a single source and b) "flash" evaporation. The obtained films were of p-type conductivity with hole concentration varied from 2×10¹⁸ cm ^-3 to 6×10²⁰ cm^-3 depending on the fabrication method. The structures Cu(InGa)Se₂-CdS were divided into two groups: the structures of type I having the CdS film thickness from 1.6 μm to 2.8 μm and the structures of type II having the CdS film thickness from 0.6 μm to 0.8 μm. It was established that the direct/reverse current ratio is 8-16. For the first type heterostructures the diffusion potential is 1.2-1.8 V and for the second type is 0.2-0.34 V. The Cu(InGa)Se₂-CdS fotosensitivity is situated in the wavelength region from 0.51 μm to 1.1 μm and is determined by the electron-hole pair generation in both materials.