| Articolul precedent |
| Articolul urmator |
 |
 104 0 |
 SM ISO690:2012DOROGAN, Valerian, VIERU, Tatiana, MANOLE, Mihail, SAVASTRU, Roxana, ZISU, Tudor. Ultraviolet radiation sensors on the basis of semiconductors. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 6, 4-7 septembrie 2000, Bucharest. Bellingham, Washington: Cavallioti, 2001, Ediţia 6, Vol.4430, Issue 1, pp. 858-863. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.432818 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of SPIE - The International Society for Optical Engineering Ediţia 6, Vol.4430, Issue 1, 2001 |
||||||
|
Conferința "ROMOPTO 2000" 6, Bucharest, Romania, 4-7 septembrie 2000 | ||||||
|
||||||
| DOI:https://doi.org/10.1117/12.432818 | ||||||
| Pag. 858-863 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
The paper deals with elaborating and manufacturing of new structure of UV radiation sensors on the basis of single-crystal Si. The structure consists of two photoactive cells, differentially connected to loading resistor. One cell is covered with a layer, transparent for visible and IR radiation and non-transparent for UV radiation. Differential connection excludes the common for both cells components. Thus, the photocurrent of differential sensor is proportional only to UV radiation intensity. |
||||||
| Cuvinte-cheie Si crystal sensor, UV radiation, UV sensors |
||||||
|
|
|
|
