Ultraviolet radiation sensors on the basis of semiconductors

Dorogan Valerian; Vieru Tatiana; Manole Mihail; Savastru Roxana; Zisu Tudor

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DOROGAN, Valerian, VIERU, Tatiana, MANOLE, Mihail, SAVASTRU, Roxana, ZISU, Tudor. Ultraviolet radiation sensors on the basis of semiconductors. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 6, 4-7 septembrie 2000, Bucharest. Bellingham, Washington: Cavallioti, 2001, Ediţia 6, Vol.4430, Issue 1, pp. 858-863. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.432818

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Proceedings of SPIE - The International Society for Optical Engineering
Ediţia 6, Vol.4430, Issue 1, 2001

Conferința "ROMOPTO 2000"
6, Bucharest, Romania, 4-7 septembrie 2000

Ultraviolet radiation sensors on the basis of semiconductors

DOI:https://doi.org/10.1117/12.432818

Pag. 858-863

Dorogan Valerian¹, Vieru Tatiana¹, Manole Mihail¹, Savastru Roxana¹², Zisu Tudor¹²

¹ Technical University of Moldova,
² Institute of Optoelectronics Bucarest-Magurele

Disponibil în IBN: 5 februarie 2024

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The paper deals with elaborating and manufacturing of new structure of UV radiation sensors on the basis of single-crystal Si. The structure consists of two photoactive cells, differentially connected to loading resistor. One cell is covered with a layer, transparent for visible and IR radiation and non-transparent for UV radiation. Differential connection excludes the common for both cells components. Thus, the photocurrent of differential sensor is proportional only to UV radiation intensity.

Cuvinte-cheie
Si crystal sensor, UV radiation, UV sensors

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