Articolul precedent |
Articolul urmator |
112 0 |
SM ISO690:2012 DOROGAN, Valerian, VIERU, Tatiana, MANOLE, Mihail, SAVASTRU, Roxana, ZISU, Tudor. Ultraviolet radiation sensors on the basis of semiconductors. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 6, 4-7 septembrie 2000, Bucharest. Bellingham, Washington: Cavallioti, 2001, Ediţia 6, Vol.4430, Issue 1, pp. 858-863. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.432818 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Proceedings of SPIE - The International Society for Optical Engineering Ediţia 6, Vol.4430, Issue 1, 2001 |
||||||
Conferința "ROMOPTO 2000" 6, Bucharest, Romania, 4-7 septembrie 2000 | ||||||
|
||||||
DOI:https://doi.org/10.1117/12.432818 | ||||||
Pag. 858-863 | ||||||
|
||||||
Descarcă PDF | ||||||
Rezumat | ||||||
The paper deals with elaborating and manufacturing of new structure of UV radiation sensors on the basis of single-crystal Si. The structure consists of two photoactive cells, differentially connected to loading resistor. One cell is covered with a layer, transparent for visible and IR radiation and non-transparent for UV radiation. Differential connection excludes the common for both cells components. Thus, the photocurrent of differential sensor is proportional only to UV radiation intensity. |
||||||
Cuvinte-cheie Si crystal sensor, UV radiation, UV sensors |
||||||
|
DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <creators> <creator> <creatorName>Dorogan, V.V.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Vieru, T.S.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Manole, M.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Savastru, R.S.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Zisu, T.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Ultraviolet radiation sensors on the basis of semiconductors</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2001</publicationYear> <relatedIdentifier relatedIdentifierType='ISBN' relationType='IsPartOf'></relatedIdentifier> <subjects> <subject>Si crystal sensor</subject> <subject>UV radiation</subject> <subject>UV sensors</subject> </subjects> <dates> <date dateType='Issued'>2001</date> </dates> <resourceType resourceTypeGeneral='Text'>Conference Paper</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>The paper deals with elaborating and manufacturing of new structure of UV radiation sensors on the basis of single-crystal Si. The structure consists of two photoactive cells, differentially connected to loading resistor. One cell is covered with a layer, transparent for visible and IR radiation and non-transparent for UV radiation. Differential connection excludes the common for both cells components. Thus, the photocurrent of differential sensor is proportional only to UV radiation intensity. </p></description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>