| Articolul precedent |
| Articolul urmator |
 |
 161 0 |
 SM ISO690:2012GRABCO, Daria, MEDINSKAYA, Maria, PYSHNAYA, N., TIGINYANU, Ion. Variations of InP single crystal mechanical properties induced by electron irradiation. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 19, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1996, Vol. 2, pp. 447-450. DOI: https://doi.org/10.1109/SMICND.1996.557416 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of the International Semiconductor Conference Vol. 2, 1996 |
||||||
|
Conferința "International Semiconductor Conference" 19, Sinaia, Romania, 7-11 octombrie 1997 | ||||||
|
||||||
| DOI:https://doi.org/10.1109/SMICND.1996.557416 | ||||||
| Pag. 447-450 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
The influence of electron irradiation (Eir = 3.5-4 MeV, D = 5·1015-3·1017 cm-2) on InP:Fe and InP:Zn single crystal microhardness (H) was investigated in the present work. It was established that microhardness dependence on irradiation dose has a non-monotonous character. The presence of three regions at H(D) curves is explained by internal defect structure modifications. |
||||||
| Cuvinte-cheie Crystals, Electron beams, hardness, iron, irradiation, Semiconductor doping, Zinc |
||||||
|
|
|
|
