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 SM ISO690:2012KOROTCHENKOV, Ghenadii, MICHAILOV, Victor, BLAJE, V.. Nature of M-InP contacts aging. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 19, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1996, Vol. 2, pp. 459-462. DOI: https://doi.org/10.1109/SMICND.1996.557419 |
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 Proceedings of the International Semiconductor Conference Vol. 2, 1996 |
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Conferința "International Semiconductor Conference" 19, Sinaia, Romania, 7-11 octombrie 1997 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1996.557419 | ||||||
| Pag. 459-462 | ||||||
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In this report the causes of low temperature aging of M-InP contacts (Au, Ag, Cu, Al, Ni) were examined. On the basis of analysis of M-InP contacts Auger-profiles a conclusion on dominated processes, taking place at the M-InP interface was drawn. We had found that M-InP Schottky barriers aging was defined by proceeding of diffusion processes at the interface. The main of these diffusion processes is indium diffusion from InP into metal and intermediate layer. |
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| Cuvinte-cheie Aging of materials, Diffusion in solids, electric contacts, Interfaces (materials), Semiconducting indium phosphide, Semiconductor metal boundaries |
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