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 SM ISO690:2012SHUTOV, Serghei, VASILIEV, Ion. Transient photocapacitance spectroscopy of Al-As2Se3 junction. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 19, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1996, Vol. 2, pp. 463-466. DOI: https://doi.org/10.1109/SMICND.1996.557420 |
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 Proceedings of the International Semiconductor Conference Vol. 2, 1996 |
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Conferința "International Semiconductor Conference" 19, Sinaia, Romania, 7-11 octombrie 1997 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1996.557420 | ||||||
| Pag. 463-466 | ||||||
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From long-term (20 to 1000 s) photocapacitance relaxation measurements on an Al-As2Se3 junction the spectral dependence of density and photoionization cross section of the gap states was derived in the range from 1.35 to 1.92 eV. Two photoionization thresholds at 1.36 and 1.53 eV have been found and ascribed to the gap states of charged defects. |
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| Cuvinte-cheie Capacitance measurement, deep level transient spectroscopy, Photoionization, Semiconducting selenium compounds, Semiconductor materials |
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