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 SM ISO690:2012GRABCO, Daria, MEDINSKAYA, Maria, PYSHNAYA, N., TIGINYANU, Ion. Variations of InP single crystal mechanical properties induced by electron irradiation. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 19, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1996, Vol. 2, pp. 447-450. DOI: https://doi.org/10.1109/SMICND.1996.557416 |
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 Proceedings of the International Semiconductor Conference Vol. 2, 1996 |
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Conferința "International Semiconductor Conference" 19, Sinaia, Romania, 7-11 octombrie 1997 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1996.557416 | ||||||
| Pag. 447-450 | ||||||
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The influence of electron irradiation (Eir = 3.5-4 MeV, D = 5·1015-3·1017 cm-2) on InP:Fe and InP:Zn single crystal microhardness (H) was investigated in the present work. It was established that microhardness dependence on irradiation dose has a non-monotonous character. The presence of three regions at H(D) curves is explained by internal defect structure modifications. |
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| Cuvinte-cheie Crystals, Electron beams, hardness, iron, irradiation, Semiconductor doping, Zinc |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Grabco, D.Z.</dc:creator> <dc:creator>Medinschi, M.I.</dc:creator> <dc:creator>Pyshnaya, N.B.</dc:creator> <dc:creator>Tighineanu, I.M.</dc:creator> <dc:date>1996</dc:date> <dc:description xml:lang='en'><p>The influence of electron irradiation (E<sub>ir</sub> = 3.5-4 MeV, D = 5·10<sup>15</sup>-3·10<sup>17</sup> cm<sup>-2</sup>) on InP:Fe and InP:Zn single crystal microhardness (H) was investigated in the present work. It was established that microhardness dependence on irradiation dose has a non-monotonous character. The presence of three regions at H(D) curves is explained by internal defect structure modifications.</p></dc:description> <dc:identifier>10.1109/SMICND.1996</dc:identifier> <dc:source>Proceedings of the International Semiconductor Conference (Vol. 2) 447-450</dc:source> <dc:subject>Crystals</dc:subject> <dc:subject>Electron beams</dc:subject> <dc:subject>hardness</dc:subject> <dc:subject>iron</dc:subject> <dc:subject>irradiation</dc:subject> <dc:subject>Semiconductor doping</dc:subject> <dc:subject>Zinc</dc:subject> <dc:title>Variations of InP single crystal mechanical properties induced by electron irradiation</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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