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 SM ISO690:2012BOTNARYUK, V., RAEVSKY, Simion, BELIKOV, Vasylyj, ZHILYAEV, Yurii, RUD, Yu., FEDOROV, Leonid, RUD, V.. Photoelectric properties of GaN/GaP heterostructures. In: Semiconductors, 1998, vol. 32, pp. 1077-1079. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187571 |
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  Semiconductors |
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| Volumul 32 / 1998 / ISSN 1063-7826 | ||||||
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| DOI:https://doi.org/10.1134/1.1187571 | ||||||
| Pag. 1077-1079 | ||||||
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Thin interference layers of n-GaN were grown on n- and p-type GaP substrates with (100) and (111) orientations by vapor phase epitaxy in an open chloride system. Photosensitivity spectra of isotypic and anisotypic heterojunctions under linear polarized light from the side of the wideband component (GaN) at oblique incidence were investigated. Induced polarized photosensitivity was observed, and peculiarities of this photosensitivity caused by interference in the GaN layers are discussed. |
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| Cuvinte-cheie photosensitivity, Polarized Radiation, photodetectors |
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