Photoelectric properties of GaN/GaP heterostructures

Botnaryuk V.; Raevsky Simion; Belikov Vasylyj; Zhilyaev Yurii; Rud Yu.; Fedorov Leonid; Rud V.

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BOTNARYUK, V., RAEVSKY, Simion, BELIKOV, Vasylyj, ZHILYAEV, Yurii, RUD, Yu., FEDOROV, Leonid, RUD, V.. Photoelectric properties of GaN/GaP heterostructures. In: Semiconductors, 1998, vol. 32, pp. 1077-1079. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187571

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Semiconductors

Volumul 32 / 1998 / ISSN 1063-7826

Photoelectric properties of GaN/GaP heterostructures

DOI:https://doi.org/10.1134/1.1187571

Pag. 1077-1079

Botnaryuk V.¹, Raevsky Simion¹, Belikov Vasylyj², Zhilyaev Yurii², Rud Yu.², Fedorov Leonid², Rud V.³

¹ Moldova State University,
² Ioffe Physical-Technical Institute, RAS,
³ State Educational Institution St. Petersburg State Polytechnical University

Disponibil în IBN: 16 octombrie 2023

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Thin interference layers of n-GaN were grown on n- and p-type GaP substrates with (100) and (111) orientations by vapor phase epitaxy in an open chloride system. Photosensitivity spectra of isotypic and anisotypic heterojunctions under linear polarized light from the side of the wideband component (GaN) at oblique incidence were investigated. Induced polarized photosensitivity was observed, and peculiarities of this photosensitivity caused by interference in the GaN layers are discussed.

Cuvinte-cheie
photosensitivity, Polarized Radiation, photodetectors

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