Generalized hyperbolic model for I-V characteristic of semiconductor devices
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SM ISO690:2012
PENIN, Alexander A., SIDORENKO, Anatolie. Generalized hyperbolic model for I-V characteristic of semiconductor devices. In: Microelectronics and Computer Science: The 6th International Conference, Ed. 6, 1-3 octombrie 2009, Chisinau. Bălți, Republica Moldova: Universitatea de Stat „Alecu Russo" din Bălţi, 2009, Ediţia 6, pp. 69-72. ISBN 978-9975-45-122-2.
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Microelectronics and Computer Science
Ediţia 6, 2009
Conferința "Microelectronics and Computer Science"
6, Chisinau, Moldova, 1-3 octombrie 2009

Generalized hyperbolic model for I-V characteristic of semiconductor devices


Pag. 69-72

Penin Alexander A., Sidorenko Anatolie
 
Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu"
 
 
Disponibil în IBN: 11 iulie 2023


Rezumat

It is proposed to use the models of volt-ampere characteristics of semiconductor devices such as transistors and photovoltaic cells as a physically reasonable hyperbolic characteristic of the active two-pole with self-limitation of current. In this case, analytical calculation load regime is possible, which is important for the calculations in real time. This approach also allows determining the point of the characteristic regimes, comparing the effectiveness of current regimes.

Cuvinte-cheie
transistor, Photovoltaic cell, volt-ampere characteristic, regimes of active two-pole