Articolul precedent |
Articolul urmator |
![]() |
![]() ![]() |
![]() PENIN, Alexander A., SIDORENKO, Anatolie. Generalized hyperbolic model for I-V characteristic of semiconductor devices. In: Microelectronics and Computer Science: The 6th International Conference, Ed. 6, 1-3 octombrie 2009, Chisinau. Bălți, Republica Moldova: Universitatea de Stat „Alecu Russo" din Bălţi, 2009, Ediţia 6, pp. 69-72. ISBN 978-9975-45-122-2. |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Microelectronics and Computer Science Ediţia 6, 2009 |
||||||
Conferința "Microelectronics and Computer Science" 6, Chisinau, Moldova, 1-3 octombrie 2009 | ||||||
|
||||||
Pag. 69-72 | ||||||
|
||||||
![]() |
||||||
Rezumat | ||||||
It is proposed to use the models of volt-ampere characteristics of semiconductor devices such as transistors and photovoltaic cells as a physically reasonable hyperbolic characteristic of the active two-pole with self-limitation of current. In this case, analytical calculation load regime is possible, which is important for the calculations in real time. This approach also allows determining the point of the characteristic regimes, comparing the effectiveness of current regimes. |
||||||
Cuvinte-cheie transistor, Photovoltaic cell, volt-ampere characteristic, regimes of active two-pole |
||||||
|
DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <creators> <creator> <creatorName>Penin, A.A.</creatorName> <affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu", Moldova, Republica</affiliation> </creator> <creator> <creatorName>Sidorenko, A.S.</creatorName> <affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu", Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Generalized hyperbolic model for I-V characteristic of semiconductor devices</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2009</publicationYear> <relatedIdentifier relatedIdentifierType='ISBN' relationType='IsPartOf'>978-9975-45-045-4</relatedIdentifier> <subjects> <subject>transistor</subject> <subject>Photovoltaic cell</subject> <subject>volt-ampere characteristic</subject> <subject>regimes of active two-pole</subject> </subjects> <dates> <date dateType='Issued'>2009</date> </dates> <resourceType resourceTypeGeneral='Text'>Conference Paper</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>It is proposed to use the models of volt-ampere characteristics of semiconductor devices such as transistors and photovoltaic cells as a physically reasonable hyperbolic characteristic of the active two-pole with self-limitation of current. In this case, analytical calculation load regime is possible, which is important for the calculations in real time. This approach also allows determining the point of the characteristic regimes, comparing the effectiveness of current regimes.</p></description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>