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 SM ISO690:2012DUMCHENKO, Dumitru, HUANG, Ying-Sheng, HO, Ching-Hwa, COLEV, Andrei, GHERMAN, Corneliu, KULYUK, Leonid, TIONG, Kwong-Kaw. Generalized hyperbolic model for I-V characteristic of semiconductor devices. In: Microelectronics and Computer Science: The 6th International Conference, Ed. 6, 1-3 octombrie 2009, Chisinau. Bălți, Republica Moldova: Universitatea de Stat „Alecu Russo" din Bălţi, 2009, Ediţia 6, pp. 69-75. ISBN 978-9975-45-122-2. |
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| Microelectronics and Computer Science Ediţia 6, 2009 |
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Conferința "Microelectronics and Computer Science" 6, Chisinau, Moldova, 1-3 octombrie 2009 | |
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| Pag. 69-75 | |
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A systematic optical study of Mo1-xWxS2 single crystals grown by the chemical vapor transport method in a wide range composition (0 ≤ x ≤ 1) is presented. The optical characterization was carried out using piezoreflectance (PzR) and photoluminescence (PL) measurements at room temperature. The origin and composition x dependence of A and B excitons are evaluated from PzR, indicating that the nature of the direct band edges is similar to the Mo1-xWxS2 compounds. Radiative recombination processes near indirect band gap in Mo1-xWxS2 single crystals are investigated by PL. The strong sharp lines attributed to recombination of excitons bound on electron-attractive neutral centers are observed in PL of 2H-MoS2 and 2H-WS2 but they are not visible in PL spectra of Mo1-xWxS2 single crystals. The broad-bands emission observed in PL spectra of Mo1-xWxS2 compounds are ascribed to recombination via deep centers due to the intrinsic defects of the layered crystals. |
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| Cuvinte-cheie exciton, layered crystal, photoluminescence, piezoreflectance |
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