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SM ISO690:2012 SUSHKEVICH, Konstantin, GONCEARENCO, Evghenii, NEDEOGLO, Natalia, NEDEOGLO, Dumitru. Luminescent properties of Sb-doped ZnSe single crystals. In: Moldavian Journal of the Physical Sciences, 2019, nr. 1-4(18), pp. 26-30. ISSN 1810-648X. DOI: https://doi.org/10.5281/zenodo.4019750 |
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Moldavian Journal of the Physical Sciences | ||||||
Numărul 1-4(18) / 2019 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
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DOI:https://doi.org/10.5281/zenodo.4019750 | ||||||
CZU: 535.37+538.955 | ||||||
Pag. 26-30 | ||||||
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Photoluminescence (PL) spectra of ZnSe:0.1at%Sb single crystals are studied between 90 and 300 K. The samples are grown by the chemical vapor transport (CVT) method with iodine as a transport agent and doped with Sb impurity during the growth. A yellow PL band with a maximum at 2.16 eV (575 nm) at room temperature is observed for the first time. A model of a (SbSeISe) acceptor center with the energy level located at 0.52 eV above the valence band edge is proposed, and the mechanism of the formation of this yellow PL band under direct and indirect excitation is discussed. |
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DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <identifier identifierType='DOI'>10.5281/zenodo.4019750</identifier> <creators> <creator> <creatorName>Suşchevici, C.D.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Goncearenco, E.P.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Nedeoglo, N.D.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Nedeoglo, D.D.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Luminescent properties of Sb-doped ZnSe single crystals</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2019</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier> <subjects> <subject schemeURI='http://udcdata.info/' subjectScheme='UDC'>535.37+538.955</subject> </subjects> <dates> <date dateType='Issued'>2019-12-27</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>Photoluminescence (PL) spectra of ZnSe:0.1at%Sb single crystals are studied between 90 and 300 K. The samples are grown by the chemical vapor transport (CVT) method with iodine as a transport agent and doped with Sb impurity during the growth. A yellow PL band with a maximum at 2.16 eV (575 nm) at room temperature is observed for the first time. A model of a (SbSeISe) acceptor center with the energy level located at 0.52 eV above the valence band edge is proposed, and the mechanism of the formation of this yellow PL band under direct and indirect excitation is discussed.</p></description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>