Wide band-gap II-VI semiconductors, such as ZnSe, ZnS and ZnO, have wide perspectives for application in photonics, optoelectronics and spintronics, in particularly, as solar energy converters, light emitting devices, substrates for nanoporous materials. They have wide potential to produce the sets of nanowires and nanotubes of various materials with defined values of diameter and length. It is necessary to develop new technologies for obtaining these substrates with controlled electrical parameters varied in a wide range. The best results are obtained for ZnSe crystals grown by physical vapor transport method and then doped by thermal annealing in Zn+Al melt. Specially developed thermal profile of the furnace allows to eliminate adhesion of crystals to the walls of the growth chamber, to minimize their deformation in the post-growth cooling process, and to obtain the crystals free of twins and subgrain boundaries, with dislocation density (1–5)∙103 cm-2. Modification of Al donor concentration in the annealing medium allows obtaining the uniformly doped substrates with the area up to 3 cm2 (Fig. 1), with controlled charge carrier concentration and electrical conductivity varied in the ranges of∙ 120 15 – 2∙1018 cm-3 and 1∙10-2 – 20 (Ω∙cm)-1 respectively (Fig. 2). ZnS single crystals are also obtained by means of physical vapor transport method. The most optimal conditions for Al doping annealing (Fig. 2) allows to obtain moderately conductive substrates with charge carrier concentration of 2∙1016 cm-3 and electrical conductivity of 0.3 (Ω∙cm)-1. ZnO single crystals are obtained by means of chemical vapor transport method with HCl as a transport agent. Density variation of loaded HCl that is a source of shallow donor impurities (Cl, H) in ZnO crystals, allows obtaining the samples with controlled charge carrier concentration and electrical conductivity varied in the ranges of (2– 6)∙1017 cm-3 and 0.5–9 (Ω∙cm)-1 (Fig. 2) respectively. This material is less subject to self-compensation since it is demonstrated that additional annealing in the medium enriched with Zn vapors has no strong influence on charge carrier concentration.figureFig. 1. ZnSe:Al substrate.Fig. 2. Electrical conductivity of ZnSe:Al, ZnS:Al, ZnO:HCl crystals versus doping impurity concentration in the exterior medium