Conţinutul numărului revistei |
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878 0 |
SM ISO690:2012 LEONTIE, Liviu, SPRINCEAN, Veaceslav, UNTILA, Dumitru, SPALATU, Nicolae, CARAMAN, Iuliana, COJOCARU, Ala, SUSU, Oana, LUPAN, Oleg, EVTODIEV, Igor, VATAVU-CUCULESCU, Elmira, TIGINYANU, Ion, CÂRLESCU, Aurelian, CARAMAN, Mihail. Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate. In: Thin Solid Films, 2019, nr. 689, p. 0. ISSN -. DOI: https://doi.org/10.1016/j.tsf.2019.137502 |
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Thin Solid Films | |
Numărul 689 / 2019 / ISSN - /ISSNe 0040-6090 | |
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DOI:https://doi.org/10.1016/j.tsf.2019.137502 | |
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Rezumat | |
Gallium oxide (β-Ga2O3) nanowires were synthesized by heat treatment of single crystal β-GaS plates in air. Crystal structure and composition of synthesized materials were studied by X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. Thermal treatment of β-GaS plates at 1023 K leads to the formation of a Ga2O3 (native oxide) layer on β-GaS (0001) surface of plates. Layer thickness and size of Ga2O3 wires contained were found to depend on temperature and duration of applied heat treatment. For 1023 K and 6 h, the length of Ga2O3 wires laid in the range from units to tens of nanometers, while for 1123 K and 30 min, between 30 and 40 μm. |
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Cuvinte-cheie Gallium(III) sulfide, Gallium(III) trioxide, optical properties, oxidation, photoluminescence, structural properties, thermal treatment |
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