Interband optical transitions in the region of excitonic resonance in In0.3Ga0.7As/GaAs quantum wells

Kapon Eli; Mereutza Alexandru; Dorogan Andrei; Drăguţan Nicolae; Vieru Tatiana; Syrbu Nicolae; Zalamai Victor

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KAPON, Eli, MEREUTZA, Alexandru, DOROGAN, Andrei, DRĂGUŢAN, Nicolae, VIERU, Tatiana, SYRBU, Nicolae, ZALAMAI, Victor. Interband optical transitions in the region of excitonic resonance in In0.3Ga0.7As/GaAs quantum wells. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 142-144. ISBN 978-9975-66-239-0..

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Nanotechnologies and Biomedical Engineering
Editia 1, 2011

Conferința "International Conference on Nanotechnologies and Biomedical Engineering"
1, Chișinău, Moldova, 7-8 iulie 2011

Interband optical transitions in the region of excitonic resonance in In0.3Ga0.7As/GaAs quantum wells

Pag. 142-144

Kapon Eli¹, Mereutza Alexandru¹, Dorogan Andrei², Drăguţan Nicolae², Vieru Tatiana², Syrbu Nicolae², Zalamai Victor³

¹ Swiss Federal Institute of Technology Lausanne,
² Technical University of Moldova,
³ Institute of Applied Physics, Academy of Sciences of Moldova

Disponibil în IBN: 19 iulie 2019

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Reflection spectra of In0.3Ga0.7As layers with 8nm thickness with quantum wells limited by GaAs barrier layer with 100nm thickness (bottom) and 9nm (upper) had been measured at S and P polarizations in the interval of photon energies 0.6 – 1.6eV at an incident angle near the normal one (4.5о) and Brewster angle (76 о). Thin absorption lines 0.9021eV, 1.0161eV, 1.1302eV, 1.1973eV, 1.2766eV conditioned by the transitions hh1-e1(1s), lh1-e1(1s), hh2-e2(1s), lh2e-2(1s), hh3-3(1s) and lh3-3e(1s) had been revealed. The intensity of absorption lines changes in the limits 10 – 70%.

Cuvinte-cheie
quantum wells, optical properties, exciton, resonance

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<title xml:lang='en'>Interband optical transitions in the region of excitonic resonance in In0.3Ga0.7As/GaAs quantum wells</title>
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<description xml:lang='en' descriptionType='Abstract'><p>Reflection spectra of In0.3Ga0.7As layers with 8nm thickness with quantum wells limited by GaAs barrier layer with 100nm thickness (bottom) and 9nm (upper) had been measured at S and P polarizations in the interval of photon energies 0.6 &ndash; 1.6eV at an incident angle near the normal one (4.5о) and Brewster angle (76 о). Thin absorption lines 0.9021eV, 1.0161eV, 1.1302eV, 1.1973eV, 1.2766eV conditioned by the transitions hh1-e1(1s), lh1-e1(1s), hh2-e2(1s), lh2e-2(1s), hh3-3(1s) and lh3-3e(1s) had been revealed. The intensity of absorption lines changes in the limits 10 &ndash; 70%.</p></description>
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