Thermoelectric Properties of Semimetal and Semiconductor Bi1 –xSbx Foils and Wires
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NIKOLAEVA, Albina; KONOPKO, Leonid; GHERGISHAN, Igor; ROGACKI, Krzysztof; STACHOWIAK, Piotr; JEZOWSKI, Andrzej; SHEPELEVICH, Vasily; PROKOSHIN, Valerii; GUSAKOVA, Sofia. Thermoelectric Properties of Semimetal and Semiconductor Bi1 –xSbx Foils and Wires. In: Semiconductors. 2019, nr. 5(53), pp. 657-661. ISSN 1063-7826.
10.1134/S1063782619050191
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Semiconductors
Numărul 5(53) / 2019 / ISSN 1063-7826

Thermoelectric Properties of Semimetal and Semiconductor Bi1 –xSbx Foils and Wires


DOI: 10.1134/S1063782619050191
Pag. 657-661

Nikolaeva Albina12, Konopko Leonid12, Ghergishan Igor1, Rogacki Krzysztof2, Stachowiak Piotr2, Jezowski Andrzej2, Shepelevich Vasily3, Prokoshin Valerii3, Gusakova Sofia3
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu",
2 Institute of Low Temperatures and Structural Research, PAS,
3 Belarusian State University
 
Disponibil în IBN: 10 iunie 2019


Rezumat

Abstract: The results of experimental investigations into the thermoelectric properties (electrical conductivity, thermoelectric power, and thermal conductivity) of microtextured foils and single-crystal wires based on semimetal and semiconductor Bi1 –xSbx alloys are presented in the temperature range of 4.2–300 K. It is found that the band gap ΔE in Bi–17 at % Sb wires increases with decreasing wire diameter d, which is a manifestation of the quantum-size effect. At low temperatures (T < 50 K), in the wires with d < 400 nm, the electrical conductivity increases due to the significant contribution of highly conductive surface states characteristic of topological insulators. It is found for the first time that the thermal conductivity of semimetal Bi–3 at % Sb foils at low temperatures is two orders of magnitude lower, and that of semiconductor Bi–16 at % Sb foils one order of magnitude lower, than that in bulk samples of the corresponding composition due to significant phonon scattering at grain boundaries and surfaces. This effect leads to considerable enhancement of the thermoelectric figure-of-merit ZT and can be used in miniature low-temperature thermoelectric energy converters.