Optical hysteresis in SPR structures with amorphous As2S3 film under low-power laser irradiation
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STAFE, Mihai; POPESCU, Aurelian; SAVASTRU, Dan; NEGUŢU, Constantin; VASILE, Georgiana; MIHÂILESCU, Mona; DUCARIU, Adrian ; SAVU, Valeriu; TENCIU, Daniel; MICLOS, Sorin; BAŞCHIR, Laurenţiu V.; VERLAN, Victor; BORDIAN, Olga; PUŞCAŞ, Niculae Tiberiu N.. Optical hysteresis in SPR structures with amorphous As2S3 film under low-power laser irradiation. In: Journal of Physics D: Applied Physics. 2018, nr. 12(51), p. 0. ISSN 0022-3727.
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Journal of Physics D: Applied Physics
Numărul 12(51) / 2018 / ISSN 0022-3727

Optical hysteresis in SPR structures with amorphous As2S3 film under low-power laser irradiation


DOI: 10.1088/1361-6463/aaa9cf
Pag. 0-0

Stafe Mihai1, Popescu Aurelian2, Savastru Dan2, Neguţu Constantin1, Vasile Georgiana1, Mihâilescu Mona1, Ducariu Adrian 1, Savu Valeriu2, Tenciu Daniel2, Miclos Sorin2, Başchir Laurenţiu V.2, Verlan Victor3, Bordian Olga3, Puşcaş Niculae Tiberiu N.1
 
1 University Politehnica of Bucharest,
2 Institute of Optoelectronics Bucarest-Magurele,
3 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 8 mai 2018


Rezumat

Optical hysteresis is a fundamental phenomenon that can lead to optical bistability and high-speed signal processing. Here, we present a theoretical and experimental study of the optical hysteresis phenomenon in amorphous As2S3 chalcogenide based waveguide structures under surface plasmon resonance (SPR) conditions. The SPR structure is irradiated with low power CW Ar laser radiation at 514 nm wavelength, with photon energy near the optical band-gap of As2S3, in a Kretschmann-Raether configuration. First, we determined the incidence angle on the SPR structure for resonant coupling of the laser radiation within the waveguide structure. Subsequently, by setting the near resonance incidence angle, we analyzed the variation of the laser power reflected on the SPR structure with incident power. We demonstrated that, by setting the incidence angle at a value slightly smaller than the resonance angle, the increase followed by the decrease of the incident power lead to a wide (up to 60%) hysteresis loop of the reflected power. This behavior is related to the slow and persistent photo-induced modification of the complex refractive index of As2S3 under 514 nm laser irradiation. The experimental and theoretical results are in good agreement, demonstrating the validity of the theoretical model presented here

Cuvinte-cheie
amorphous chalcogenide films,

optical hysteresis, optical switches, plasmonic waveguides, surface plasmon resonance