Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films
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VASILIEV, Ion, YOVU, M., KOLOMEYKO, Eduard. Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films. In: Moldavian Journal of the Physical Sciences, 2011, nr. 2(10), pp. 189-193. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 2(10) / 2011 / ISSN 1810-648X /ISSNe 2537-6365

Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films


Pag. 189-193

Vasiliev Ion, Yovu M., Kolomeyko Eduard
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 19 noiembrie 2013


Rezumat

The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25, and 0.30. Compositional dependences of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are deduced from these data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and the other near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method (P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).

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