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<cfResPublDate>2011-06-05</cfResPublDate>
<cfVol>10</cfVol>
<cfIssue>2</cfIssue>
<cfStartPage>189</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>https://ibn.idsi.md/ro/vizualizare_articol/4367</cfURI>
<cfTitle cfLangCode='EN' cfTrans='o'>Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films</cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 
0.09,  0.14,  0.16,  0.18,  0.20  0.25,  and  0.30.  Compositional  dependences  of  the  low-frequency 
dielectric permeability, decay  time constant and  the Kohlrausch parameter of nonexponentiality 
are  deduced  from  these  data. All  parameters  show  two  compositional  thresholds,  one  situated 
near  the xc(1)=0.09,  and  the other near  the xc(2)=0.16-0.18. These phase  transitions have been 
identified  in  the  bulk  samples  by  means  of  a  differential-scanning  calorimetric  method  
(P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).  
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<cfFamilyNames>Yovu</cfFamilyNames>
<cfFirstNames>M.</cfFirstNames>
<cfFamilyNames>Йову</cfFamilyNames>
<cfFirstNames>М.</cfFirstNames>
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