Native microdefects and as-grown dislocations in pure and doped InP crystals

Grabco Daria; Dyntu M.; Rusu Emil

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2020-12-10 12:59

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GRABCO, Daria, DYNTU, M., RUSU, Emil. Native microdefects and as-grown dislocations in pure and doped InP crystals. In: Moldavian Journal of the Physical Sciences, 2011, nr. 2(10), pp. 164-173. ISSN 1810-648X.

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Moldavian Journal of the Physical Sciences

Numărul 2(10) / 2011 / ISSN 1810-648X /ISSNe 2537-6365

Native microdefects and as-grown dislocations in pure and doped InP crystals

Pag. 164-173

Grabco Daria¹, Dyntu M.², Rusu Emil²

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova

Disponibil în IBN: 12 decembrie 2013

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The fine defect structure (native microdefects and as-grown dislocations) of pure and doped InP crystals are considered. Some kinds of point defects are detected. They are connected with the technology of crystal growth and impurity concentration. It is shown that the type and concentration of doping impurity essentially change the as-grown dislocation density and influence the mobility of freshly generated dislocations. The mechanism of plastic deformation under the action of a concentrated load is related to dislocation mobility in the InP crystals and impurity type.

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