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 SM ISO690:2012MERCALDO, L, VENERI, P, USATÎI, Iurie, PRIVATO, Carlo, ESPOSITO, E.. PECVD in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics. In: Moldavian Journal of the Physical Sciences, 2009, nr. 2(8), pp. 195-200. ISSN 1810-648X. |
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| Moldavian Journal of the Physical Sciences | ||||||
| Numărul 2(8) / 2009 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
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| Pag. 195-200 | ||||||
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Silicon nanostructures have interesting possible applications in third generation photo-
voltaics. The fabrication techniques for Si quantum dots in dielectric matrix usually involve a
high-temperature post-deposition annealing. Here we report on the spontaneous growth of
silicon quantum dots in silicon nitride films by plasma enhanced chemical vapour deposition
(PECVD) at 300°C using two different gas mixtures. Room temperature photoluminescence
(PL) has been observed, and tuning of PL emission has been demonstrated by adjusting the
gas flow rates. The effect of the strongly absorbing Si nanostructures in the silicon nitride matrix on the absorption properties has been also investigated. |
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