Indentation size effect in ITO/Si planar structure under concentrated load action
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HAREA, Evghenii. Indentation size effect in ITO/Si planar structure under concentrated load action. In: Moldavian Journal of the Physical Sciences, 2007, nr. 2(6), pp. 228-232. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 2(6) / 2007 / ISSN 1810-648X /ISSNe 2537-6365

Indentation size effect in ITO/Si planar structure under concentrated load action


Pag. 228-232

Harea Evghenii
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 16 decembrie 2013


Rezumat

For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure- ments of microhardness of these structures have shown results varying over a wide range in dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being characteristic of film structures is proposed.

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