Superconductivity properties of compound MgB2 on basis of two-band model
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PALISTRANT, Maria, URSU, Vasile. Superconductivity properties of compound MgB2 on basis of two-band model. In: Moldavian Journal of the Physical Sciences, 2007, nr. 2(6), pp. 166-173. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 2(6) / 2007 / ISSN 1810-648X /ISSNe 2537-6365

Superconductivity properties of compound MgB2 on basis of two-band model


Pag. 166-173

Palistrant Maria, Ursu Vasile
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 16 decembrie 2013


Rezumat

The theory of thermodynamic properties of two-band superconductor with reduced den- sity of charge carriers is developed on the basis of phonon superconducting mechanism with strong electron-phonon interaction. This theory is adapted to describe the behavior of critical temperature TC, energy gaps Δ1, Δ2, and the relative jump of electron specific heat (CS-CN)/CN in the point T = TC along with the variation of charge carrier density in the compound MgB2 when substitutional impurities with different valence are introduced into the system. It is shown, that according to the filling mechanism of energy bands which overlap on the Fermi surface, the quantities TC, Δ1, Δ2 decrease when this compound is doped with electrons and remain constant or weakly change when the system is doped with holes. The theory qualitatively agrees with the experimental data. It is also shown that the consideration of inter- and intraband scattering of electrons on impurity potential improves this agreement.

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<title xml:lang='en'>Superconductivity properties of compound MgB2 on basis of two-band model</title>
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<description xml:lang='en' descriptionType='Abstract'>The theory of thermodynamic properties of two-band superconductor with reduced den-

sity of charge carriers is developed on the basis of phonon superconducting mechanism with 
strong electron-phonon interaction. 
This theory is adapted to describe the behavior of critical temperature TC, energy gaps 
Δ1, Δ2, and the relative jump of electron specific heat  (CS-CN)/CN in the point T = TC along 
with the variation of charge carrier density in the compound MgB2 when substitutional impurities with different valence are introduced into the system. It is shown, that according to the 
filling mechanism of energy bands which overlap on the Fermi surface, the quantities TC, Δ1, 

Δ2 decrease when this compound is doped with electrons and remain constant or weakly 
change when the system is doped with holes. The theory qualitatively agrees with the experimental data. 
It is also shown that the consideration of inter- and intraband scattering of electrons on 
impurity potential improves this agreement. </description>
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