New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis

Arsentyev Ivan; Boltovets N.; Bobyl A.; Ivanov V.; Konakova Raisa; Kudryk Ya.; Lytvyn O.; Milenin Viktor; Tarasov Ilya; Belyaev Alexander; Rusu Emil

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2020-12-11 10:42

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ARSENTYEV, Ivan, BOLTOVETS, N., BOBYL, A., IVANOV, V., KONAKOVA, Raisa, KUDRYK, Ya., LYTVYN, O., MILENIN, Viktor, TARASOV, Ilya, BELYAEV, Alexander, RUSU, Emil. New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis . In: Moldavian Journal of the Physical Sciences, 2005, nr. 4(4), pp. 481-484. ISSN 1810-648X.

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Moldavian Journal of the Physical Sciences

Numărul 4(4) / 2005 / ISSN 1810-648X /ISSNe 2537-6365

New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis

Pag. 481-484

Arsentyev Ivan¹, Boltovets N.², Bobyl A.¹, Ivanov V.², Konakova Raisa³, Kudryk Ya.³, Lytvyn O.³, Milenin Viktor³, Tarasov Ilya¹, Belyaev Alexander³, Rusu Emil⁴

¹ Ioffe Physical-Technical Institute of the Russian Academy of Sciences i,
² State Enterprise Research Institute “Orion”,
³ V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Science of Ukraine,
⁴ Institute of Applied Physics, Academy of Sciences of Moldova

Disponibil în IBN: 29 noiembrie 2013

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Rezumat

A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” and “rigid” (standard) n -InP substrates. The advantages of epitaxial layers grown on porous n -InP substrates and barrier structures on their basis are demonstrated

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