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SM ISO690:2012 ARSENTYEV, Ivan, BOLTOVETS, N., BOBYL, A., IVANOV, V., KONAKOVA, Raisa, KUDRYK, Ya., LYTVYN, O., MILENIN, Viktor, TARASOV, Ilya, BELYAEV, Alexander, RUSU, Emil. New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
. In: Moldavian Journal of the Physical Sciences, 2005, nr. 4(4), pp. 481-484. ISSN 1810-648X. |
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Moldavian Journal of the Physical Sciences | |
Numărul 4(4) / 2005 / ISSN 1810-648X /ISSNe 2537-6365 | |
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Pag. 481-484 | |
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Rezumat | |
A new technological approach to production of structurally perfect epitaxial films LPE-
grown on “soft” porous n
-InP substrates is considered. We studied surface morphology,
boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky
diodes made on “soft” and “rigid” (standard) n
-InP substrates. The advantages of epitaxial
layers grown on porous n
-InP substrates and barrier structures on their basis are
demonstrated |
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