Phonon transport in amorphous silicon nanowires
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2020-10-18 15:41
SM ISO690:2012
CRÎŞMARI, Dumitru. Phonon transport in amorphous silicon nanowires. In: Moldavian Journal of the Physical Sciences, 2012, nr. 4(11), pp. 354-360. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 4(11) / 2012 / ISSN 1810-648X /ISSNe 2537-6365

Phonon transport in amorphous silicon nanowires

Pag. 354-360

Crîşmari Dumitru
 
Moldova State University
 
 
Disponibil în IBN: 7 decembrie 2013


Rezumat

Among the perspective research directions in modern physics, an important role is played by the investigation of amorphous nanostructures [1-3]. The effect of the drop in lattice thermal conductivity in these compounds can be used in thermoelectric applications [4, 5]. It is difficult both theoretically and practically to make in fact a distinction between truly amorphous solids and crystalline solids if the crystal sizes are very small [6]. Even amorphous materials have a certain short-range order at the atomic length scale due to the nature of chemical bonding. Furthermore, in very small crystals, a large fraction of the atoms are located at the crystal surface or near it; relaxation of the surface and interfacial effects distort the atomic positions and decrease the structural order.