New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis

Arsentyev Ivan; Bobyl A.; Boltovets N.; Ivanov V.; Konakova Raisa; Kudryk Ya.; Lytvyn O.; Milenin Viktor; Tarasov Ilya; Belyaev Alexander; Rusu Emil

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ARSENTYEV, Ivan, BOBYL, A., BOLTOVETS, N., IVANOV, V., KONAKOVA, Raisa, KUDRYK, Ya., LYTVYN, O., MILENIN, Viktor, TARASOV, Ilya, BELYAEV, Alexander, RUSU, Emil. New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis. In: International Crimean Conference "Microwave and Telecommunication Technology", Ed. 14, 13-17 septembrie 2004, Sevastopol. Sevastopol: Weber Publishing Co., 2004, Ediția 14, pp. 528-529. ISBN 978-966796869-4. DOI: https://doi.org/10.1109/crmico.2004.183319

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International Crimean Conference "Microwave and Telecommunication Technology"
Ediția 14, 2004

Conferința "International Crimean Conference ”Microwave and Telecommunication Technology”"
14, Sevastopol, Ucraina, 13-17 septembrie 2004

New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis

DOI:https://doi.org/10.1109/crmico.2004.183319

Pag. 528-529

Arsentyev Ivan¹, Bobyl A.¹, Boltovets N.², Ivanov V.², Konakova Raisa³, Kudryk Ya.³, Lytvyn O.³, Milenin Viktor³, Tarasov Ilya¹, Belyaev Alexander³, Rusu Emil⁴

¹ Ioffe Physical-Technical Institute, RAS,
² State Enterprise Research Institute “Orion”,
³ V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Science of Ukraine,
⁴ Institute of Applied Physics, Academy of Sciences of Moldova

Disponibil în IBN: 17 iunie 2024

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Rezumat

A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n⁺-InP substrates is considered. We studied surface morphology, boundary between phases in TiB_x-n-InP contact and I-V curves of Au-TiB _x-n-InP Schottky diodes made on "soft" and "rigid" (standard) n⁺-InP substrates. The advantages of epitaxial layers grown on porous n⁺-InP substrates and barrier structures on their basis are demonstrated.

Cuvinte-cheie
Engineering controlled terms Auger electron spectroscopy, Boundary layer flow, crystallization, Epitaxial growth, etching, magnetron sputtering, Microwave devices, Schottky barrier diodes, Stoichiometry, Substrates Engineering uncontrolled terms Electrochemical etching, epitaxial layers, Gauss distribution, Semiconductor substrates Engineering main heading Semiconducting indium phosphide