Phase change memory materials are promising for the next-generation of non-volatile flash memory that will serve in new mobile computing, entertainment and other handheld electronics. Among them are chalcogenide glasses Ge-Sb-Te (GST) which can exist in two separates structural states - amorphous and cristalline. Switching of the material from one to another state can be done by heating applying an electrical pulse or by exposure to intense laser beam. We report the changes of optical parameters of amorphous Ge ₁Sb ₂Te ₄ films under heat treatment and light exposure.