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 SM ISO690:2012YOVU, M., VASILIEV, Ion, KOLOMEYKO, Eduard, SHPOTYUK, Oleh. Photocapacitance relaxation and rigidity transition in Ge xAs xSe 1-2x amorphous films. In: Journal of Optoelectronics and Advanced Materials, 2011, vol. 13, pp. 1478-1482. ISSN 1454-4164. |
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  Journal of Optoelectronics and Advanced Materials |
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| Volumul 13 / 2011 / ISSN 1454-4164 | ||||||
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| Pag. 1478-1482 | ||||||
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The photo-capacitance relaxation of amorphous Ge xAs xSe 1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25 and 0.30. Compositional dependencies of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of non-exponentially function are deduced from the experimental data. All parameters show two compositional thresholds, one situated near the x c(1)=0.09, and another - near the x c(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method [1]. |
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| Cuvinte-cheie Amorphous films, Dielectric relaxation, Rigidity transition |
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