GaSe single crystal films were doped during growth process with Cu or Cd atoms with concentration ranged between 0.05 and 0.50 at. %. Single crystal films (with thickness about 0.5 μm) were obtained by mechanical splitting of bulk single crystals. Impurity concentration was determined using atomic emission spectroscopy. Spectral dependences of absorption coefficient and photoconductivity were studied in the range 1.50 eV - 3.70 eV. It was experimentally established that the absorption spectra have an additional absorption band and its corresponding energy depends on the nature (Cu or Cd) and concentration of the doping atoms. Also, independently on the presence of the dopant, other two absorption bands in the IR region are present.