High resolution image device on the base of Me-ChDs structure
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ANDRIESH, Andrei, MALKOV, Sergei, VERLAN, Victor. High resolution image device on the base of Me-ChDs structure. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 1, 21 iulie 1993, Munich. Bellingham, Washington: SPIE, 1993, Vol.1987, pp. 171-178. ISBN 0819412368. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.165190
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Proceedings of SPIE - The International Society for Optical Engineering
Vol.1987, 1993
Conferința "Recording Systems"
1, Munich, Germania, 21 iulie 1993

High resolution image device on the base of Me-ChDs structure

DOI:https://doi.org/10.1117/12.165190

Pag. 171-178

Andriesh Andrei, Malkov Sergei, Verlan Victor
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 12 februarie 2024


Rezumat

The Me-Chalcogenide glassy semiconductor-dielectric-semiconductor (Me - As2S3 - SiO2 - Si) structure was formed and the writing and readout processes of the optical image with high resolution were studied. The structures make the positive and negative images possible. The device works in regimes both accumulation of the small signals and real time. The space functional separation of the recording and readout allows to carry out unde stroing repetition readout of the image and other operations.

Cuvinte-cheie
Engineering controlled terms Arsenic compounds, Cameras, Geometrical optics, Laser applications, Recording instruments, Semiconducting silicon compounds, Semiconductor lasers, silica, Sulfur compounds Engineering uncontrolled terms Chalcogenide glassy semiconductors, Functional separations, high resolution, High resolution image, Negative image, Optical image, Readout process, Real time Engineering main heading Image recording