Reliefographical structures based on doped chalcogenide semiconductors for optical data storage in wide spectral region including X-ray
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ROTARU, Vasile, CHAPURIN, Igor, KORSHAK, Oleg. Reliefographical structures based on doped chalcogenide semiconductors for optical data storage in wide spectral region including X-ray. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 3, 1-2 august 2001, San Diego. Bellingham, Washington: SPIE, 2001, Ediția 3, Vol.4508, pp. 171-175. ISBN 0819442224. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.450785
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Proceedings of SPIE - The International Society for Optical Engineering
Ediția 3, Vol.4508, 2001
Conferința "Penetrating Radiation Systems and Applications"
3, San Diego, Statele Unite ale Americii, 1-2 august 2001

Reliefographical structures based on doped chalcogenide semiconductors for optical data storage in wide spectral region including X-ray

DOI:https://doi.org/10.1117/12.450785

Pag. 171-175

Rotaru Vasile, Chapurin Igor, Korshak Oleg
 
Moldova State University
 
 
Disponibil în IBN: 2 februarie 2024


Rezumat

We report a non-silver, two-layered semiconductor-thermoplastic structure for visible and X-ray data recording: Photothermoplastic materials (PTPM) consist the chalcogenide glassy semiconductors and polymeric thermoplastic materials. Our researches were aimed to find out a possibility of using the PTPM as recording media for imaging including X-rays.

Cuvinte-cheie
Chalcogenide semiconductors, Photothermoplastic materials, Thermoplastics, thin films, X-ray imaging