Hartree-fock Semiconductor Bloch Equations and charge density correlations
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KLYUKANOV, Alexandr, LOIKO, Natalia, BABUSHKIN , Ihar, GURĂU, Virginia. Hartree-fock Semiconductor Bloch Equations and charge density correlations. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 1, 26 iunie - 1 iulie 2001, Minsk. Bellingham, Washington: SPIE, 2002, Vol.4748, pp. 301-312. ISSN 0277786X. DOI: https://doi.org/10.1117/12.468964
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Proceedings of SPIE - The International Society for Optical Engineering
Vol.4748, 2002
Conferința "Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures"
1, Minsk, Belarus, 26 iunie - 1 iulie 2001

Hartree-fock Semiconductor Bloch Equations and charge density correlations

DOI:https://doi.org/10.1117/12.468964

Pag. 301-312

Klyukanov Alexandr1, Loiko Natalia2, Babushkin Ihar2, Gurău Virginia1
 
1 Moldova State University,
2 Stepanov Institute of Physics, National Academy of Sciences of Belarus
 
 
Disponibil în IBN: 1 februarie 2024


Rezumat

Generalized Semiconductor Bloch Equations are derived with using the fluctuation-dissipation theorem. Four operator expectation values like density-density correlators are calculated with account of coherent memory effects. Interactions with mixed plasmon-phonons modes and excitonic effects are taken into account. Comparison with different other theoretical approaches is provided. Numerical calculations of the spontaneous radiation produced by interband multiplasmon recombination of electron-hole pairs are fulfilled in dependence on the temperature and plasma concentration. It is shown that the intensity maximum of spontaneous radiation shifted to the region of the first LO-phonon satellite with increasing of concentration in accordance with experiments [19,21].

Cuvinte-cheie
Correlation effects, Electron-hole plasma, LO-phonons