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 SM ISO690:2012DMITRUK, Nicolas, GOREA, Oleg, MIKHAILIK, T., PIDLISNYI, E., ROMANIUK, Volodymyr, WAGNER, Thomas. Characterization of thin film semiconductor heterostructures using interference modes in wide spectral region. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 1, 1 aprilie 2003, Moscow. Bellingham, Washington: SPIE, 2003, Vol.5024, pp. 223-228. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.497152 |
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 Proceedings of SPIE - The International Society for Optical Engineering Vol.5024, 2003 |
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Conferința "Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics" 1, Moscow, Rusia, 1 aprilie 2003 | ||||||
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| DOI:https://doi.org/10.1117/12.497152 | ||||||
| Pag. 223-228 | ||||||
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The investigation of semiconductor GaAs/GaPAs heterostructures in wide spectral region from 0.3 to 70 μm were performed by excitation of interference modes. Such approach allows to avoid the ambiguity which arises at solving of inverse spectroscopic or ellipsometric problem. We propose to use the interference extremuma excited in the optical phonon region as a very sensitive to total thickness of heterostructure grown on doped substrate. The results show the interference method has a good sensitivity as well to chemical composition x of alloy as to geometrical parameters of corresponding films. |
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| Cuvinte-cheie Ellipsometry, Heterostructure, interference, Reflectance, superlattices |
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