| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 |
 50 0 |
 SM ISO690:2012RADAUTSANU, Sergiu, TIGINYANU, Ion, URSACHI, Veaceslav, FOMIN, Vladimir, POKATILOV, Evghenii. The Peculiarities of the Temperature Broadening of Raman Light Scattering Lines in Zn(Cd)Ga2Se4 Single Crystals. In: Physica Status Solidi (B) Basic Research, 1990, vol. 162, pp. 63-66. ISSN 0370-1972. DOI: https://doi.org/10.1002/pssb.2221620143 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Physica Status Solidi (B) Basic Research |
||||||
| Volumul 162 / 1990 / ISSN 0370-1972 | ||||||
|
||||||
| DOI:https://doi.org/10.1002/pssb.2221620143 | ||||||
| Pag. 63-66 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
The ZnGa2Se4 and CdGa2Se4 compounds fall into the class of defect diamond-like semiconductors containing stoichiometric vacancies and crystallizing in the tetragonal lattice with S4 space group3) 111. Both materials are direct-gap ones with close values of the band gap energy E (2.58 eV for ZnGa2Se4 and 2.57 eV for CdGa Se at 300 K 121). In spite of this the optical properties of both crystals are substantially different. For example, in contrast to ZnGa2Se4, the compound CdGa2Se4 is characterized by a high degree of luminescence polarization, the presence of excitonic lines in the reflection spectra, and a change of the absorption edge with temperature according to Urbach's rule 13 to 5/. The aim of the present note is a comparative study of the Raman light scattering (RLS) spectra in ZnGa Se The ZnGa2Se4 and CdGa2Se4 samples studied have been prepared by the iodine transport technique. |
||||||
|
|
|
|
