Ab initio calculations and measurements of thermoelectric properties of V2O5 films
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CHUMAKOV, Yurii, XIONG, Shiyun, SANTOS, Joao R., FERREIRA, I., TERMENTZIDIS, K., POKROPIVNY, Alex V., CORTONA, Pietro, VOLZ, S.. Ab initio calculations and measurements of thermoelectric properties of V2O5 films. In: Journal of Electronic Materials, 2013, vol. 42, pp. 1597-1603. ISSN 0361-5235. DOI: https://doi.org/10.1007/s11664-012-2329-6
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Journal of Electronic Materials
Volumul 42 / 2013 / ISSN 0361-5235 /ISSNe 1543-186X

Ab initio calculations and measurements of thermoelectric properties of V2O5 films

DOI:https://doi.org/10.1007/s11664-012-2329-6

Pag. 1597-1603

Chumakov Yurii12, Xiong Shiyun1, Santos Joao R.3, Ferreira I.3, Termentzidis K.4, Pokropivny Alex V.1, Cortona Pietro56, Volz S.1
 
1 Laboratoire d’Energe´tique Mole´culaire et Macroscopique, Combustion, UPR CNRS 288, Ecole Centrale Paris,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 NOVA University of Lisbon,
4 Université de Lorraine, LEMTA UMR 7563, CNRS,
5 Laboratoire Structures, Propriétés et Modélisation des Solides,
6 Ecole Centrale Paris
 
 
Disponibil în IBN: 29 decembrie 2023


Rezumat

Density functional theory and the Boltzmann transport equation were used to calculate the thermoelectric transport coefficients for bulk V 2O5 and MV2O5 (M = Cr, Ti, Na, Li). The structural relaxation for the given compounds based on the ABINIT code was observed. The temperature dependences of the Seebeck coefficients as well as electrical and thermal electrical conductivities of all relaxed structures displayed anisotropic behavior. Electrooptical measurements of thermoelectric properties were carried out on V2O5 thin films obtained by thermal evaporation with different post-annealing treatments. A Seebeck coefficient of -148 μV/K at T = 300 K was obtained in the in-plane direction for V2O5 thin films with thickness less than 100 nm. 

Cuvinte-cheie
ab initio calculations, Boltzmann transport equation, electrical conductivity, Electro-optical measurements, Post annealing treatment, Temperature dependence, thermoelectric properties, Thermoelectric transport