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 SM ISO690:2012KONOPKO, Leonid, RUSU, Emil, NIKOLAEVA, Albina, MORARI, Vadim, POPOV, Ivan, KOROMYSLICHENKO, Tatiana, SMYSLOV, Vladimir, NIKA, Denis, HUBER, Tito. Thermoelectric Properties of Ag-doped SnSe Microwires and Layers. In: Proceedings of the International Semiconductor Conference: CAS, 11-13 octombrie 2023, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2023, Ediția 46, pp. 255-258. ISBN 979-835032395-5. DOI: https://doi.org/10.1109/CAS59036.2023.10303710 |
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 Proceedings of the International Semiconductor Conference Ediția 46, 2023 |
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Conferința "46th International Semiconductor Conference" Sinaia, Romania, 11-13 octombrie 2023 | ||||||
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| DOI:https://doi.org/10.1109/CAS59036.2023.10303710 | ||||||
| Pag. 255-258 | ||||||
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The thermoelectric properties of single-crystal layers and polycrystalline glass-insulated microwires made of Ag-doped SnSe in a temperature range of 90-300 K are studied. SnSeAg0.01 single crystals are grown by the vertical Bridgman method from a stoichiometric melt. A 35-μm-thick single-crystal layer is formed by the exfoliation method at a low temperature; glass-insulated polycrystalline microwires with different diameters of 39-141 μm are prepared by the Ulitovsky technique. The power factor of all the samples at room temperature has a value of 15-18 μW cm-1 K-2, which monotonically decreases with decreasing temperature. According to the measured thermoelectric power, all the samples exhibit n-type conductivity. |
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| Cuvinte-cheie Electric power factor, layered semiconductors, Selenium compounds, Silver alloys, Silver compounds, single crystals, temperature, ternary alloys, Thermoelectric equipment, thermoelectricity, Tin compounds |
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