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 SM ISO690:2012SCORŢESCU, Dumitru, MATICIUC, Natalia, NICORICI, Valentina, SPALATU, Nicolae, POTLOG, Tamara, HIIE, Jaan, VALDNA, Vello. Electrical properties of thermally annealed CdS thin films obtained by chemical bath deposition. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 34, 17-19 octombrie 2011, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2011, Vol. 2, pp. 455-458. ISBN 978-161284171-7. DOI: https://doi.org/10.1109/SMICND.2011.6095845 |
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| Proceedings of the International Semiconductor Conference Vol. 2, 2011 |
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Conferința " International Semiconductor Conference" 34, Sinaia, Romania, 17-19 octombrie 2011 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2011.6095845 | ||||||
| Pag. 455-458 | ||||||
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Electrical conductivity and the Hall-effect are investigated in the temperature interval (80-400) K on thermally annealed in H 2 CdS thin films obtained by chemical bath deposition. Different characters of the temperature dependence of conductibility are observed in the CdS films annealed at different temperatures. The Hall measurements allow calculating the values of the N A, N D, n ex and E D. According to Hall measurements the CdS films show several donor levels at different energetic depths in dependence of the annealing temperature. The sample annealed at high temperatures than 350C proves to be compensated with a sharply decreasing electrical conductivity with the temperature decrease. |
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| Cuvinte-cheie Annealing temperatures, CBD method, CdS films, CdS thin films, Chemical-bath deposition, Donor levels, electrical conductivity, Hall coefficient, Hall measurements, high temperature, Temperature decrease, Temperature dependence, Temperature intervals |
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