Electro- and photostimulated chemical processes in aluminium-chalcogenide glass semiconductor thin layer structures
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BIVOL, Valeriu, TRIDUKH, Ghennadi, AKIMOVA, Elena, TSIULYANU , Dumitru. Electro- and photostimulated chemical processes in aluminium-chalcogenide glass semiconductor thin layer structures . In: Proceedings of the International Semiconductor Conference: CAS, Ed. 19, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1996, Vol. 1, pp. 309-311. DOI: https://doi.org/10.1109/SMICND.1996.557389
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Proceedings of the International Semiconductor Conference
Vol. 1, 1996
Conferința "International Semiconductor Conference"
19, Sinaia, Romania, 7-11 octombrie 1997

Electro- and photostimulated chemical processes in aluminium-chalcogenide glass semiconductor thin layer structures

DOI:https://doi.org/10.1109/SMICND.1996.557389

Pag. 309-311

Bivol Valeriu, Tridukh Ghennadi, Akimova Elena, Tsiulyanu Dumitru
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 7 decembrie 2023


Rezumat

The results of comparative investigations of photostructural processes in As2Se3 layers and of electrophotoinduced changes in Al-As2Se3 structures are presented. It was found that in Al-Chalcogenide Glass Semiconductor (ChGS) structures irreversible chemical processes occur under the action of an electric field and light irradiation. This fact leads to the modification of bulk properties of the ChGS film, which is explained by diffusion of Al into ChGS and hydrolysis of the ChGS in the electric field.

Cuvinte-cheie
aluminum, crystal structure, diffusion, Electric field effects, Electric fields, electrochemistry, hydrolysis, irradiation, light, Photochemical reactions, Semiconducting glass, thin films