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 SM ISO690:2012DYNTU, M., KANTSER, Valeriu, MEGLEI, Dragoş. Piezoresistance effect in PbTe semiconductor microwires deformed by bending. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 21, 6-10 octombrie 1998, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1998, Vol. 2, pp. 459-462. DOI: https://doi.org/10.1109/SMICND.1998.733779 |
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| Proceedings of the International Semiconductor Conference Vol. 2, 1998 |
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Conferința "International Semiconductor Conference" 21, Sinaia, Romania, 6-10 octombrie 1998 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1998.733779 | ||||||
| Pag. 459-462 | ||||||
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Piezoresistance properties of n- and p-type PbTe semiconductor microwires in a glass coating deformed by bending were studied. It was found that the sample resistance changes linearly with the deformation change. The piezoresistance coefficients are high within the limits (30-200) depending on the diameter and type of the samples. An optimum regime of heat treatment leading the resistance and coefficients of tensor sensitivity to stability in time was found. |
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| Cuvinte-cheie Bending (deformation), coatings, Electric resistance, glass, Heat treatment, Semiconducting lead compounds, Thermal effects |
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