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 SM ISO690:2012ANDRONIC, Ion, SIMASHKEVICH, Aleksey, POTLOG, Tamara, SHERBAN, Dormidont, KETRUSH, Petru. Dosimetric characteristics of the indium phosphide based photoconvertors. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 21, 6-10 octombrie 1998, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1998, Vol. 2, pp. 549-551. 10.1109/SMICND.1998.732248 |
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| Proceedings of the International Semiconductor Conference Vol. 2, 1998 |
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Conferința "International Semiconductor Conference" 21, Sinaia, Romania, 6-10 octombrie 1998 | ||||||
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The results of dosimetric characteristics investigations for the detectors fabricated on the basis of ITO-InP structures of SIS type are given. It was shown that between short circuit current and X-rays irradiation dose power there is a linear dependence as in the case of the studied convertors illumination with integral light from the visible region of spectrum. The sensitivity of ITO-InP structures functioning as X-ray detectors is of 3 nA/(rad min) cm2 which indicates the possibility of their utilization as an active element of ionizing radiation detecting devices. |
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| Cuvinte-cheie dosimetry, Photoelectric devices, Semiconducting indium phosphide, Semiconductor device manufacture, Semiconductor device structures, Short circuit currents, X rays |
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DataCite XML Export
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