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 SM ISO690:2012GOREA, Oleg, KOROTCOV, Alexandru, MALIKOVA, Lyudmila, POLLAK, Fred Hugo. Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 22, 5-9 octombrie 1999, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1999, Vol. 1, pp. 113-116. 10.1109/SMICND.1999 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 1999 |
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Conferința "International Semiconductor Conference" 22, Sinaia, Romania, 5-9 octombrie 1999 | ||||||
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| Pag. 113-116 | ||||||
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The contactless electroreflectance (CER) and piezoreflectance (PzR) were used to characterized GaAs/GaAs1-xPx multiple quantum well (MQW) structures grown by chloride transport chemical vapor deposition (CTCVD) on GaAs substrates. For the GaAs0.97P0.03/GaAs0.71P0.29 MQW comparison between the experimentally observed energies of a number of observed quantum transitions and a theoretical envelope function calculation, including the effects of strain in the barriers, made it possible to evaluate the unstrained conduction band offset parameter Qc = 0.50±0.05. This result is in a good agreement with most prior papers dedicated to this matter. |
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| Cuvinte-cheie Chemical vapor deposition, Energy gap, Heterojunctions, photoluminescence, Quantum theory, Semiconducting gallium compounds, Semiconductor growth, Spectroscopic analysis, Substrates, Transport properties |
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