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 SM ISO690:2012GOREA, Oleg, TATARINSKAYA, Olga. Application of transfer matrix method for detailed description of phonon-polariton states in semiconductor superlattices. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 22, 5-9 octombrie 1999, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1999, Vol. 1, pp. 371-374. DOI: https://doi.org/10.1109/SMICND.1999.810540 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 1999 |
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Conferința "International Semiconductor Conference" 22, Sinaia, Romania, 5-9 octombrie 1999 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1999.810540 | ||||||
| Pag. 371-374 | ||||||
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On the base of transfer matrix formalism the dispersion of phonon polaritons in finite and infinite semiconductor SLs was calculated. Account of retardation effects leads to appearance of the additional `dynamical' bandgaps in interface polaritons spectra. The complex reflection coefficients also were calculated for the particular case of GaAs/GaAsP SLs. It is shown that the fine structure of spectra can be described by the applicated method. |
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| Cuvinte-cheie Interfaces (materials), mathematical models, Matrix algebra, phonons, Semiconducting gallium arsenide, Spectrum analysis |
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