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 SM ISO690:2012RUSU, Emil, URSACHI, Veaceslav, RAEVSKY, Simion, VLAZAN, Paulina. Preparation and characterization of Ga2O3 and GaN nanoparticles. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 7, 21-24 august 2014, Constanța. Bellingham, Washington: SPIE, 2015, Ediţia 7, Vol.9258, pp. 1-7. ISBN 978-162841325-0. ISSN 0277786X. DOI: https://doi.org/10.1117/12.2069969 |
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 Proceedings of SPIE - The International Society for Optical Engineering Ediţia 7, Vol.9258, 2015 |
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Conferința "Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies" 7, Constanța, Romania, 21-24 august 2014 | |
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| DOI:https://doi.org/10.1117/12.2069969 | |
| Pag. 1-7 | |
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In this communication, we present results on preparation of GaN nanoparticles by conversion of Ga2O3 nanocrystals in a flow of NH3 and H2. The monoclinic Ga2O3 nanoparticles have been prepared by hydrothermal method with gallium nitrate and sodium hydroxide as precursors. Ga2O3 nanowires are produced with increasing the duration of the hydrothermal process up to 24 hours. The production of β-phase Ga2O3 has been confirmed by X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. According to XRD, Raman and FTIR spectra, wurtzite type GaN nanocrystals with an average size of 28.6 nm are obtained by nitridation of Ga2O3 nanoparticles. Doping of Ga2O3 nanomaterial with Eu3+ ions in the hydrothermal process is demonstrated, and the emission spectra of this Eu-doped nanomaterial are compared with those of Eu-doped nanoparticles prepared previously by solid state reactions |
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| Cuvinte-cheie FTIR spectroscopy, Ga2O3 nanoparticles, GaN nanocrystals, hydrothermal method, photoluminescence, Raman spectroscopy, XRD spectroscopy |
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