Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I-V characteristics

Croitoru Mihail; Gladilin Vladimir; Fomin Vladimir; Devreese Josef T.; Magnus Wim; Schoenmaker Wim J.; Soree Bart

Conţinutul numărului revistei

Articolul precedent

Articolul urmator

122

SM ISO690:2012

CROITORU, Mihail, GLADILIN, Vladimir, FOMIN, Vladimir, DEVREESE, Josef T., MAGNUS, Wim, SCHOENMAKER, Wim J., SOREE, Bart. Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I-V characteristics. In: Solid State Communications, 2008, vol. 147, pp. 31-35. ISSN 0038-1098. DOI: https://doi.org/10.1016/j.ssc.2008.04.025

EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core

Solid State Communications

Volumul 147 / 2008 / ISSN 0038-1098 /ISSNe 1879-2766

Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I-V characteristics

DOI:https://doi.org/10.1016/j.ssc.2008.04.025

Pag. 31-35

Croitoru Mihail¹, Gladilin Vladimir¹²³, Fomin Vladimir¹³⁴, Devreese Josef T.¹⁴, Magnus Wim⁵¹, Schoenmaker Wim J.⁶, Soree Bart⁵

¹ University of Antwerp,
² Catholic University of Leuven (KU Leuven),
³ Moldova State University,
⁴ Eindhoven University of Technology,
⁵ Interuniversity Microelectronics Centre (IMEC),
⁶ MAGWEL, Leuven

Disponibil în IBN: 14 noiembrie 2023

Rezumat

Quantum mechanical features of the electron transport in a SOI MOSFET are described within the Wigner function formalism which explicitly deals with electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO₂ interface. The calculated device characteristics are obtained as a function of the thickness of the semiconductor layer. An analysis of the I-V characteristics of the MOSFET shows a substantial reduction of the short-channel effect with a decrease in the channel thickness of the device.

Cuvinte-cheie
A. Nanostructures, D. Electronic transport